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| SEMICONDUCTOR TECHNICAL DATA ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES Small Package : SOT-23. Low Forward Voltag : VF=0.92V(Typ.). Fast Reverse Recovery Time : trr=1.6ns(Typ.). A G L BAW56 SILICON EPITAXIAL PLANAR DIODE E B L DIM A 2 MILLIMETERS _ 2.93 + 0.20 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 Small Total Capacitance : CT=2.2pF(Typ.). 3 D B C D E G H J K H 1 MAXIMUM RATING (Ta=25 CHARACTERISTIC Maximum (Peak) Reverse Voltage Reverse Voltage Continuous Forward Current Surge Current (10ms) Power Dissipation Junction Temperature Storage Temperature Range ) SYMBOL VRM VR IF IFSM PD Tj Tstg RATING 85 80 250 2 225* mW 300** 150 -55150 E E UNIT V V mA A C N P P L M N P M 3 1. CATHODE 1 2. CATHODE 2 3. ANODE 2 1 K SOT-23 * Note1 : Package Mounted On FR-5 Board (25.4 19.05 1.57mm) ** Note2 : Package Mounted On 99.5% Alumina (10 8 0.6mm) Marking Type Name J Lot No. H6 ELECTRICAL CHARACTERISTICS (Ta=25E CHARACTERISTIC ) TEST CONDITION IF=1mA IF=10mA IF=150mA VR=80V VR=0, f=1MHz IF=10mA MIN. TYP. 0.61 0.74 MAX. 1.25 0.5 4.0 4.0 i A pF nS V UNIT SYMBOL VF(1) Forward Voltage VF(2) VF(3) Reverse Current Total Capacitance Reverse Recovery Time IR CT trr 2009. 1. 23 Revision No : 1 1/2 BAW56 IF 10 FORWARD CURRENT I F (mA) 10 10 3 - VF 10 REVERSE CURRENT I R (A) Ta=100 C I R - VR 2 1 Ta=75 C 5 Ta C =-2 5 C 00 1 10 10 -1 Ta =1 Ta =2 10 -1 C Ta=50 C 10 -2 Ta=25 C -2 0 0.2 0.4 0.6 0.8 1.0 1.2 10 -3 0 20 40 60 80 FORWARD VOLTAGE VF (V) REVERSE VOLTAGE VR (V) C T - VR REVERSE RECOVERY TIME t rr (ns) 2.5 TOTAL CAPACITANCE C T (pF) 2.0 1.5 1.0 0.5 0 f=1MHz Ta=25 C t rr 100 50 30 IF Ta=25 C Fig. 1 10 5 3 1 0.5 0.1 0.3 1 3 10 30 100 FORWARD CURRENT I F (mA) 0.2 1 3 10 30 100 200 REVERSE VOLTAGE VR (V) Fig. 1. REVERSE RECOVERY TIME(t rr ) TEST CIRCUIT INPUT WAVEFORM 0 INPUT 0.01F DUT OUTPUT SAMPLING OSCILLOSCOPE (RIN =50) I F =10mA 0 IR WAVEFORM 0.1 I R 50 2k -6V 50ns E t rr PULSE GENERATOR (R OUT =50) 2009. 1. 23 Revision No : 1 50 2/2 |
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